Gas mixtures for the vapor deposition of semiconductor material

Details Gas mixtures for the vapor deposition of semiconductor material Gas mixtures for the vapor deposition of semiconductor material

1985-04-01

1987-01-20

Lovering, Richard D.

Compositions

Reductive bleachant, deoxidant, reductant, or generative

Sulfur containing reductant, bleachant, deoxidant, or...

427 39, 136261, C09K 1107

Patent

active

046378952

ABSTRACT:
Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.

REFERENCES:
patent: 4363828 (1982-12-01), Brodsky et al.
patent: 4388344 (1983-06-01), Shuskus et al.
patent: 4405656 (1983-09-01), Shimizu et al.
patent: 4517223 (1985-05-01), Ovshinsky et al.

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