Gas mixtures for aluminum etching

Details Gas mixtures for aluminum etching Gas mixtures for aluminum etching

1983-09-12

1985-01-22

Demers, Arthur P.

Compositions

Gaseous compositions

156643, 204192E, 204192EC, 204192R, C23K 1500

Patent

active

044950900

ABSTRACT:
A process for selectively etching an aluminum-containing coating in preference to a masking material on a surface of the aluminum-containing coating by positioning a patterned masking material on the aluminum-containing coating in a radio frequency plasma etching chamber and introducing an etchant gas and a source of oxygen and silicon to the interior of the chamber under conditions where silicon dioxide is deposited selectively on masking material layer while the unmasked aluminum-containing coating is etched.

REFERENCES:
patent: 4348577 (1982-09-01), Toyoda
patent: 4364793 (1982-12-01), Graves
patent: 4397724 (1983-08-01), Moran
Turner et al. Thin Solid Films 83(1981), pp. 253-58.

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