Coating processes – Coating by vapor – gas – or smoke – Base includes an inorganic compound containing silicon or...
Patent
1987-06-24
1993-06-22
Lawrence, Evan
Coating processes
Coating by vapor, gas, or smoke
Base includes an inorganic compound containing silicon or...
118715, 118725, 118730, 156611, C23C 1652
Patent
active
052215563
ABSTRACT:
The present invention relates to improved injectors for use in CVD reactor systems, and more specifically for use in epitaxial deposition systems for processing a single water-at-a-time. The improved injectors of the present invention are used to provide a predetermined desired shaped velocity profile for the injected reactant gases for insuring a more uniform deposition on a single wafer to be processed within the reactor system. In the first embodiment, the reactant gas is fed into a horizontal gas distribution manifold cavity and distributed horizontally in both directions. The gas then passes through a manifold wall having a pattern of predetermined sized and spaced apertures therein. The size of the apertures and the distribution of these sizes, shapes the resultant velocity profile to a desired pattern. Since the volume flow rate through each aperture of the manifold member increases as the diameter of the aperture increases, the resultant velocity profile produced will have its maximum at the center where the largest apertures exist and its minimum at the sides where the smallest apertures exist and the velocity profile will have a desired predetermined shape as it exits the gas delivery chamber and is turned 90.degree. for injection into the input of the reaction chamber. In an alternate embodiment, a plurality of linearly dimensioned slots are provided between spacer legs for producing the predetermined desired shaped velocity profile.
REFERENCES:
patent: 4499853 (1985-02-01), Miller
patent: 4807562 (1989-02-01), Sandys
Hawkins Mark R.
Robinson McDonald
Epsilon Technology Inc.
Lawrence Evan
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