Coating apparatus – Gas or vapor deposition
Patent
1995-08-11
1996-06-11
Breneman, R. Bruce
Coating apparatus
Gas or vapor deposition
118725, 118730, C23C 1600
Patent
active
055251579
ABSTRACT:
The present invention relates to improved injectors for use in CVD reactor systems, and more specifically for use in epitaxial deposition systems for processing a single wafer-at-a-time. The improved injectors of the present invention are used to provide a predetermined desired shaped velocity profile for the injected reactant gases for insuring a more uniform deposition on a single wafer to be processed within the reactor system. In the first embodiment, the reactant gas is fed into a horizontal gas distribution manifold cavity and distributed horizontally in both directions. The gas then passes through a manifold wall having a pattern of predetermined sized and spaced apertures therein. The size of the apertures and the distribution of these sizes, shapes the resultant velocity profile to a desired pattern. Since the volume flow rate through each aperture of the manifold member increases as the diameter of the aperture increases, the resultant velocity profile produced will have its maximum at the center where-the largest apertures exist and its minimum at the sides where the smallest apertures exist and the velocity profile will have a desired predetermined shape as it exits the gas delivery chamber and is turned 90 for injection into the input of the reaction chamber. In an alternate embodiment, a plurality of linearly dimensioned slots are provided between spacer legs for producing the predetermined desired shaped velocity profile.
REFERENCES:
patent: 3293074 (1966-12-01), Nickl
patent: 3338209 (1967-08-01), Bhola
patent: 3516811 (1970-06-01), Gatchet et al.
patent: 3750620 (1973-07-01), Eversteijn et al.
patent: 3785853 (1974-01-01), Kirkman et al.
patent: 4033286 (1977-07-01), Chern et al.
patent: 4096822 (1978-06-01), Yamawaki et al.
patent: 4434742 (1984-03-01), Hinaff et al.
patent: 4499853 (1985-02-01), Miller
patent: 4583492 (1986-04-01), Cowher et al.
patent: 4756272 (1988-07-01), Kessler et al.
patent: 4807562 (1989-02-01), Sandys
patent: 4825809 (1989-05-01), Mieno
patent: 4836138 (1989-06-01), Robinson
patent: 4839145 (1989-06-01), Gale
patent: 4846102 (1989-07-01), Ozias
patent: 4920918 (1990-05-01), Adams
patent: 4949669 (1990-08-01), Ishii et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5044315 (1991-09-01), Ozias
patent: 5186756 (1993-02-01), Benko et al.
patent: 5221556 (1993-06-01), Hawkins et al.
patent: 5244694 (1993-09-01), Ozias
patent: 5261960 (1993-11-01), Ozias
patent: 5269847 (1993-12-01), Anderson et al.
patent: 5411590 (1995-05-01), Hawkins et al.
patent: 5458918 (1995-10-01), Hawkins et al.
Wang, C. A., et al., "Flow Visualization Studies for Optimization of OMVPE Reactor Designs," Journal of Crystal Growth, vol. 77, Sep. 1966, pp. 136-143.
Hawkins Mark R.
Robinson McDonald
Advanced Semiconductor Materials America, Inc.
Breneman R. Bruce
Lund Jeffry
LandOfFree
Gas injectors for reaction chambers in CVD systems does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gas injectors for reaction chambers in CVD systems, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gas injectors for reaction chambers in CVD systems will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-349743