Gas injection systems for a LPCVD furnace

Coating apparatus – Gas or vapor deposition – With treating means

Patent

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Details

118715, 118719, 118728, C23C 1600

Patent

active

060275693

ABSTRACT:
Systems and methods disclosed provide a LPCVD furnace which includes a lower gas injection tube that enters a quartz tube of the LPCVD furnace at a lower portion thereof, and extends toward the upper portion of the quartz tube. Thus, the lower gas injection tube extends a shorter distance within the quartz tube than a conventional injection tube attached to the bell-shaped end of the quartz tube. A LPCVD furnace in accordance with the invention comprises a quartz tube having an interior chamber which includes an upper portion (adjacent a belled end) and a lower portion (adjacent a flanged end), and a gas injection tube for injecting a gas into the interior chamber of the quartz tube, wherein the gas injection tube enters the interior chamber of the quartz tube at the lower portion thereof and extends toward the upper portion thereof. A pedestal for supporting a wafer boat may be positioned at the lower portion of the interior chamber, and configured to receive the gas injection tube.

REFERENCES:
patent: 4989540 (1991-02-01), Fuse et al.
patent: 5076206 (1991-12-01), Bailey et al.
patent: 5318633 (1994-06-01), Yamamoto et al.
patent: 5482559 (1996-01-01), Imai et al.
patent: 5584934 (1996-12-01), Lin
patent: 5616025 (1997-04-01), Choi et al.

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