Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Patent
1997-06-16
2000-09-05
Lund, Jeffrie R
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
118715, 118725, 156345, C23C 1600
Patent
active
06113984&
ABSTRACT:
A CVD reactor includes separate reaction and pressure chambers, where the reaction chamber is contained within and isolates process or reactant gases from the pressure chamber. The reactor also includes a gas injection system which pre-heats and injects diffused process gas(es) into the reaction chamber in a somewhat vertical direction through a bottom surface of the reaction chamber. The gas injection system injects hydrogen or other appropriate gas in a vertical direction through the bottom surface of the reaction chamber. The flow of hydrogen or other appropriate gas is intermediate the flow of the process gas(es) and a surface of the reaction chamber, thereby re-directing the process gas flow parallel to the top surface of a wafer therein. In this manner, the reaction chamber does not require a long entry length for the process gas(es). This flow of hydrogen or other suitable gas also minimizes undesirable deposition on the surface of the reaction chamber.
REFERENCES:
patent: 4699805 (1987-10-01), Seelbach et al.
patent: 4924807 (1990-05-01), Nakayama et al.
patent: 5062386 (1991-11-01), Christensen
patent: 5238499 (1993-08-01), Van de Ven et al.
patent: 5264040 (1993-11-01), Geyling
patent: 5269847 (1993-12-01), Anderson et al.
patent: 5370738 (1994-12-01), Watanabe et al.
patent: 5516367 (1996-05-01), Lei et al.
patent: 5551982 (1996-09-01), Anderson et al.
patent: 5653808 (1997-08-01), MacLeish et al.
patent: 5843233 (1998-12-01), Van de Ven et al.
patent: 5882417 (1999-03-01), Van de Ven et al.
patent: 5891251 (1999-04-01), MacLeish et al.
patent: 5916369 (1999-06-01), Anderson et al.
del Solar Enrique Suarez
MacLeish Joseph H.
Mailho Robert D.
Sanganeria Mahesh K.
Chen Tom
Concept Systems Design, Inc.
Lund Jeffrie R
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