Gas injecting gadget for semiconductor production facilities and

Etching a substrate: processes – Mechanically shaping – deforming – or abrading of substrate

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156345, 216 88, B44C 122

Patent

active

059807644

ABSTRACT:
A gas injecting gadget or wafer-mounting susceptor, made of a chemical composition comprising 59.8-69.8% by weight of nickel, 25-35% by weight of copper, a valance weight of aluminum, cobalt, manganese, titanium or the combinations thereof, and E trace amount of inevitable impurities, is produced by a method comprising the steps of: a rough cutting process in which the substance is roughly cut and surface-processed; a precise cutting process in which the roughly processed substance is precisely processed in three stages comprising rough process, finishing process and shaping process; a holing process in which a number of fine holes are formed on the precisely processed substance by a drilling process and chips are removed by a reaming process; an abrasion process in which the substance with holes are abraded by a wet abrading process and a belt polishing process; and a washing and inspecting process. The substance, superior in corrosion and abrasion resistance, along with the method, gives the gas injecting gadget an improved hardness and an extended life.

REFERENCES:
patent: 4734152 (1988-03-01), Geis et al.
patent: 5597495 (1997-01-01), Keil et al.

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