Gas for plasma reaction, process for producing the same, and...

Details Gas for plasma reaction, process for producing the same, and... Gas for plasma reaction, process for producing the same, and...

2008-03-11

2008-03-11

Olsen, Allan (Department: 1763)

Coating processes

Direct application of electrical, magnetic, wave, or...

Polymerization of coating utilizing direct application of...

C427S490000, C427S569000

Reexamination Certificate

active

07341764

ABSTRACT:
A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.

REFERENCES:
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patent: WO 00/59021 (2000-10-01), None
patent: 02/39494 (2002-05-01), None
International Search Report for the corresponding international patent application No. PCT/JP02/11360, dated Feb. 4, 2003. (Citing Reference AC-AE.).

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