Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-03-14
2008-11-11
Olsen, Allan (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C216S067000, C252S079100
Reexamination Certificate
active
07449415
ABSTRACT:
A high-purity gas for plasma reaction having an octafluorocyclopentene purity of at least 99.9% by volume based on the total volume of the gas for plasma reaction, wherein the total content of nitrogen gas and oxygen gas, contained as trace gaseous ingredients of the remainder, is not larger than 200 ppm by volume. This high-purity gas for plasma reaction can be produced by (1) a process of distilling crude octafluorocyclopentene in an inert gas of group 0, or (2) a process of distilling crude octafluorocyclopentene into a purity of at least 99.9% by volume, and then, removing an impurity remainder.
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Hirayama Toshinobu
Sugawara Mitsuru
Sugimoto Tatsuya
Yamada Toshiro
Edwards Angell Palmer & & Dodge LLP
Olsen Allan
Zeon Corporation
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