Gas for plasma reaction and process for producing thereof

Details Gas for plasma reaction and process for producing thereof Gas for plasma reaction and process for producing thereof

2005-03-14

2008-11-11

Olsen, Allan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C216S067000, C252S079100

Reexamination Certificate

active

07449415

ABSTRACT:
A high-purity gas for plasma reaction having an octafluorocyclopentene purity of at least 99.9% by volume based on the total volume of the gas for plasma reaction, wherein the total content of nitrogen gas and oxygen gas, contained as trace gaseous ingredients of the remainder, is not larger than 200 ppm by volume. This high-purity gas for plasma reaction can be produced by (1) a process of distilling crude octafluorocyclopentene in an inert gas of group 0, or (2) a process of distilling crude octafluorocyclopentene into a purity of at least 99.9% by volume, and then, removing an impurity remainder.

REFERENCES:
patent: 5632928 (1997-05-01), Jackson
patent: 5648566 (1997-07-01), Kruger et al.
patent: 5840820 (1998-11-01), DeSimone et al.
patent: 5847243 (1998-12-01), Sekiya et al.
patent: 6159862 (2000-12-01), Yamada et al.
patent: 6211420 (2001-04-01), Sekiya et al.
patent: 6242359 (2001-06-01), Misra
patent: 6300526 (2001-10-01), Navarrini et al.
patent: 6383403 (2002-05-01), Sekiya et al.
patent: 6465359 (2002-10-01), Yamada et al.
patent: 6824589 (2004-11-01), Watanabe et al.
patent: 6884365 (2005-04-01), Hirayama et al.
patent: 2002/0063098 (2002-05-01), Mueller et al.
patent: 2003/0094098 (2003-05-01), Watanabe et al.
patent: 2005/0092240 (2005-05-01), Sugawara et al.
patent: 2005/0163716 (2005-07-01), Unger et al.
patent: 4-346428 (1992-12-01), None
patent: 7-335611 (1995-12-01), None
patent: 09-095458 (1997-04-01), None
patent: 2000229894 (2000-08-01), None
patent: 2001247493 (2001-09-01), None
patent: WO97/43233 (1997-11-01), None
patent: WO98/19332 (1998-05-01), None
Charles C. Allgood and Jeremy D. Blanks, Examining purification and certification strategies for high-purity C2F6 process gas, MICROmagazine[dot]com, Apr. 1998.
Joe Van Gompel, PFCs in the Semiconductor Industry: A Primer, Semiconductor International, Jul. 1, 2000.
DuPont Zyron®, Technical Papers, PFC. Emissions Reduction from Semiconductor Processing Tools: Sixth Status Report on Technology and Industry Activities, Jan. 1998.
Google Search. Air Liquide Electronics, High Purity Specialty Gases and Chemicals for the Semiconductor Industry Octafluorocylopentene C5F8 Perfluorocyclopentene, Aug. 2002, 2 pages.
Google Search, Praxair. Octafluorocyclopentene—(C5F8), Aug. 2003, 2 pages.
International Search Report dated Aug. 15, 2000.

Affiliated with

Also associated with

Rating

Gas for plasma reaction and process for producing thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gas for plasma reaction and process for producing thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gas for plasma reaction and process for producing thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4041536