Gas for plasma reaction and method for production thereof

Details Gas for plasma reaction and method for production thereof Gas for plasma reaction and method for production thereof

2005-04-26

2005-04-26

Norton, Nadine G. (Department: 1765)

Compositions

Etching or brightening compositions

C252S079400, C438S706000

Reexamination Certificate

active

06884365

ABSTRACT:
A high-purity gas for plasma reaction having an octafluorocyclopentene purity of at least 99.9% by volume based on the total volume of the gas for plasma reaction, wherein the total content of nitrogen gas and oxygen gas, contained as trace gaseous ingredients of the remainder, is not larger than 200 ppm by volume. This high-purity gas for plasma reaction can be produced by (1) a process of distilling crude octafluorocyclopentene in an inert gas of group 0, or (2) a process of distilling crude octafluorocyclopentene into a purity of at least 99.9% by volume, and then, removing an impurity remainder.

REFERENCES:
patent: 6159862 (2000-12-01), Yamada et al.
patent: 6465359 (2002-10-01), Yamada et al.
Google Search. Air Liquide Electronics, High Purity Specialty Gases and Chemicals for the Semiconductor Industry OCTAFLUOROCYLOPENTENE C5F8 Perfluorocyclopentene, Aug. 2002, 2 pages.*
Google Search. PRAXAIR. OCTAFLUOROCYCLOPENTENE—(C5F8), Aug. 2003, 2 pages.

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