Gas foil rotating substrate holder

Details Gas foil rotating substrate holder Gas foil rotating substrate holder

1992-11-09

1993-07-13

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Work support

118500, C23C 1600

Patent

active

052263835

ABSTRACT:
A gas foil susceptor for rotating a wafer (16) during growth in a chemical vapor deposition chamber. Inner and outer annular grooves (24, 26) are formed at the bottom of a tapered depression (14) in the upper surface of a base (10). Feed and discharge tubes (28, 32) extend laterally from the annular grooves to the exterior (34) of the base. A disk (12) is fit within the depression and bears the wafer (16) on its upper surface. Three spiral channels (38, 40, 42) are formed on the bottom of the disk and their inner and outer ends (44, 46) overlie the inner and outer circular channels respectively. A gas flow is set up between the two circular channels and impinges the sides of the spiral channels to thereby rotate the disk and the wafer on it. When the base and disk are made of graphite, an external RF coil can controllably heat the wafer.

REFERENCES:
patent: 4961399 (1990-10-01), Frijlink
P. M. Frijlink, "A new versatile, large size MOVPE reactor," Journal of Crystal Growth, 1988, vol. 93, pp. 207-215.
"Substrate Rotation Cell," `MR226`/`MR350`, product information sheet of MR Semicon, 2 pp. (date unknown).

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