Gas flow systems in CCVD reactors

Coating apparatus – Gas or vapor deposition – Multizone chamber

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Details

118729, 118733, 4272481, 4272555, C23C 1600

Patent

active

049496697

ABSTRACT:
Gas flow structures are described for the inputting and exhausting of gases for a continuous vapor deposition reactor to cause an even flow of gases within the reactor chamber and to prevent the deposition of reaction material on the walls of the reactor chamber. Gas inlet and exhaust port structures are provided for multiple-chamber chemical vapor deposition reactors having gas input and exhaust junctions, wherein the ports may include, in order to provide uniform flow, baffles or a plurality of orifices with or without shutters. Two vertically spaced gas inlets may be used, wherein gas from a second inlet prevents deposition on the reactor chamber from gases introduced through the first inlet.

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Viva, O. R., "Obtaining Improved Gas Flow in Diffusion Apparatus", IBM Technical Disclosure Bulletin, vol. 14, No. 9 (Feb. 1972), p. 2550.

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