Gas feed for reactive ion etch system

Details Gas feed for reactive ion etch system Gas feed for reactive ion etch system

1983-11-14

1985-01-29

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 156646, 204298, H01L 21306, C23F 100

Patent

active

044964234

ABSTRACT:
The gas feed system disclosed herein is useful in a reactive ion etching system in which a gas plasma is energized by an electrode plate through which the gas is introduced. Propagation of the plasma discharge down the gas feed path is blocked by a feed system in which the space between a pair of porous metal plugs is filled with a porous insulating material having a pore size too small to support discharge, i.e. corresponding to the mean free electron path in the gas.

REFERENCES:
patent: 4270999 (1981-06-01), Hassan et al.
patent: 4313783 (1982-02-01), Davies et al.

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