Gas doping of solids by crystal growth

Details Gas doping of solids by crystal growth Gas doping of solids by crystal growth

1990-12-14

1992-09-08

Scott, Jr., Leon

Coherent light generators

Particular active media

Gas

372 41, H01S 322

Patent

active

051464683

ABSTRACT:
A high concentration of diatomic molecules is caged in a host crystal by a crystal growth process, in which all other internal degrees of freedom of the diatomic molecule, except the vibrational, are frozen. Such a system provides an efficient mid-infrared, solid-state laser that can be pumped by a laser diode. Other uses include magnetic (Faraday) rotators, electro-optic switches, and Q-switches. The crystal growth process employs Czochralski-type or Bridgman-type processes under high pressure to introduce the diatomic molecule into the host lattice at a temperature slightly above the melting point of the host crystal, followed by slow cooling.

REFERENCES:
patent: 4638485 (1987-01-01), Gellermann et al.

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