Gas distributor for OMVPE Growth

Details Gas distributor for OMVPE Growth Gas distributor for OMVPE Growth

1988-12-09

1990-03-13

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118715, 156611, C23C 1600

Patent

active

049075349

ABSTRACT:
A new gas distributor 31 provides an extremely uniform gas across a wide cross section distance. An OMVPE reactor equipped with this distributor, a unique low volume quartz insert, a load-locked growth chamber and a low pressure operation scheme provide a reactor system capable of growing extremely uniform GaAs and AlGaAs epilayers across four two-inch wafers or one three to four inch wafer with atomic layer abruptness capablity. The performance of such an OMVPE reactor provides superior morphology and throughout compared to conventional OMVPE reactors with equivalent performance to MBE. Since the gas distributor is capable of distributing an extremely uniform gas across a wide cross-section distance, it can also be employed in other types of OMVPE reactors to improve the material uniformity.

REFERENCES:
Ludowise, J. appl. Phys. 58(8), Oct. 15, 1985, pp. R31-R55.
Solid-State Tech., May '88, by M. L. Hammond, pp. 159-164.
"Radial Manifold Enables MOCVD to Compete with MBE", Jan. 11 ,1986, by J. G. Posa, Crystal Specialities, Inc., 30 pages.

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