Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1978-04-27
1980-11-25
Lazarus, Richard B.
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
29 2517, 316 20, H01J 902
Patent
active
042350018
ABSTRACT:
A gas panel fabrication method includes forming a first set of dielectrically coated parallel conductors on a glass plate, forming a metal spacer layer over the first conductors, oxidizing those areas of the metal spacer layer which are between the first conductors, forming a second set of dielectrically coated parallel conductors over the spacer layer in orthogonal relationship with the first conductors, etching the unoxidized areas of the spacer layer from between the second conductors, and forming a cover plate to hold an ionizable gas adjacent to the orthogonal conductors.
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patent: 3559190 (1971-01-01), Bitzer et al.
patent: 3646384 (1972-02-01), Lay
patent: 3737341 (1973-06-01), Croset et al.
patent: 3787106 (1974-01-01), Schermerhorn
patent: 3789470 (1974-02-01), Owaki
patent: 3805210 (1974-04-01), Croset et al.
patent: 3808497 (1974-04-01), Greeson, Jr. et al.
patent: 3825454 (1974-07-01), Kikuchi et al.
patent: 3827776 (1974-08-01), Nakayama
Connerton Joseph J.
Lazarus Richard B.
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