Gas detecting method and its detector

Measuring and testing – Gas analysis – Detector detail

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Details

422 98, 702 22, G01N 900, G01N 2700, G01N 1900

Patent

active

061289450

ABSTRACT:
A metal oxide semiconductor is subjected to a temperature change, and signals measured at two timings in the course of the temperature change are used to define a two-dimensional topological space. In the topological space, two axis, an axis indicating the concentration of the gas to be detected and an axis corresponding to drift are defined, and the topological space is represented by an oblique coordinate system. The gas concentration is determined from projection of measured data onto the gas concentration axis.

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patent: 5007283 (1991-04-01), Ambos
patent: 5305231 (1994-04-01), Coppler et al.
patent: 5841021 (1998-11-01), DeCastro et al.
Analytical Chemistry, vol. 68, No. 13, Jul. 1, 1996, P.2067-2072, "Gas Sensing Based on a Nonlinear Response: Discrimination between Hydrocarbons and Quantifiation of Individual . . ".

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