Garnet magnetoresistive sensor for magnetic fields

Details Garnet magnetoresistive sensor for magnetic fields Garnet magnetoresistive sensor for magnetic fields

1978-08-30

1980-04-15

Moffitt, James W.

Static information storage and retrieval

Magnetic bubbles

Detectors

365 33, 365 36, G11C 1908

Patent

active

041986890

ABSTRACT:
The discovery of a magnetoresistive effect in oriented, crystalline, semiconducting iron garnet materials is used to design devices which detect the presence or orientation of magnetic fields. The principal measure of this effect is that the resistance between two electrodes (12) on the garnet body (11) varies as an imposed magnetic field (14, 15) produces a change in the direction of the magnetization of the body (11). This effect is useful when the garnet is so constituted as to possess a resistivity from 10.sup.3 to 10.sup.7 ohm-centimeters. Also, the anisotropy field of the garnet body must be comparable to less than the magnitude of the magnetic field to be detected. One aspect of particular utility for magnetic "bubble" detectors (in magnetic bubble memories) is the isotropic character of the resistance when the magnetization is varied in the (111) plane but the significant change of resistance when the magnetization is moved to the [111] direction.

REFERENCES:
patent: 3973183 (1976-08-01), Kataoka
Physics Review B-vol. 14, no. 6; Sep. 15, 1976 pp. 2520-2527. _
Material Research Bulletin-vol. 12, 1977; pp. 289-298. _

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