Garnet epitaxial films with high Curie temperatures

Details Garnet epitaxial films with high Curie temperatures Garnet epitaxial films with high Curie temperatures

1981-12-07

1984-08-28

Dixon, Jr., William R.

Stock material or miscellaneous articles

Composite

Of inorganic material

365 33, 428900, B32B 904, G11C 1908

Patent

active

044684380

ABSTRACT:
The use of vanadium on the tetrahedral site of a garnet material together with a suitable charge compensating ion, such as Ca.sup.2+, results in advantageous materials. In particular, very high Curie temperatures, e.g., up to 524 degrees C., in films capable of supporting 1 .mu.m-sized bubble domains, are observed. Additionally, the change of collapse field with temperatures for magnetic bubble domains in the garnet material is linear and closely parallels over a wide temperature range the change of bubble controlling static field of permanent magnets typically employed in magnetic bubble devices. A substantially constant bubble size is maintainable over a wide temperature range. The desired garnet compositions are produced advantageously from a melt containing a suitable ratio of vanadium to calcium.

REFERENCES:
patent: 3964035 (1976-06-01), Blank et al.
patent: 4001793 (1977-01-01), Henry et al.
patent: 4002803 (1977-01-01), Blank
patent: 4034358 (1977-07-01), Blank
patent: 4139905 (1979-02-01), Blank et al.
patent: 4337521 (1982-06-01), Blank et al.

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