Gapped gate charge-flow transistor with a thin film sensor havin

Details Gapped gate charge-flow transistor with a thin film sensor havin Gapped gate charge-flow transistor with a thin film sensor havin

1977-04-25

1979-06-19

Corcoran, Robert J.

Electricity: measuring and testing

Determining nonelectric properties by measuring electric...

Erosion

357 23, 357 25, 357 26, G01N 2700, H01L 2978, H01L 2984

Patent

active

041588070

ABSTRACT:
A charge-flow transistor having a gapped gate electrode and a thin-film sensor material in the gap, which sensor material is sensitive to a property of the ambient environment and has a surface conductance that differs substantially from the bulk conductance thereof. The charge-flow transistor is shown as part of an instrument operable to measure said property.

REFERENCES:
Catch the Wandering Threshold Voltage, Motorola Monitor; vol. 6, No. 2; Jul. 1968; pp. 18-20.
Wishneusky, John A.; Device Structures for Micro Electronic Gas Sensors; Master's Thesis; MIT; Sep. 1974.
Senturia et al.; The Charge Flow Transistor; Paper Presented at IEEE Meeting; Washington, D. C.; Dec. 7, 1976; Paper 12.8.

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