Gapless gate charge coupled device

Details Gapless gate charge coupled device Gapless gate charge coupled device

1985-07-01

1987-06-23

Munson, Gene M.

Electrical pulse counters, pulse dividers, or shift registers: c

Counting or dividing in incremental steps

Beam type tube

357 15, 377 63, H01L 2978, G11C 1928

Patent

active

046757147

ABSTRACT:
Thin electrodes are coupled to a resistive film on an active semiconductive layer to form a gapless gate CCD (GGCCD). The active layer is formed ona semi-insulating substrate, and the resistive film is joined to the active layer by a Schottky barrier. The thin electrode coupled to the resistive film induce fringing fields near the surface to provide high speed charge transport and permit the use of a thin active layer.

REFERENCES:
patent: 3728590 (1973-04-01), Kim et al.
patent: 4089023 (1978-05-01), Losehand
patent: 4168444 (1979-09-01), Van Santen
patent: 4245233 (1981-01-01), Lohstroh
patent: 4264915 (1981-04-01), Bierhenke et al.
patent: 4285000 (1981-08-01), Deyhimy et al.
Malaviya "Charge-Coupled Device Using Polycrystalline Silicon Gate Structure" IBM Tech. Disclosure Bulletin, vol. 16 (7/73) p. 635.

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