Gap pure green light emitting element substrate

Details Gap pure green light emitting element substrate Gap pure green light emitting element substrate

1994-04-20

1995-04-11

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant concentration or concentration profile

257102, 257103, H01L 3300

Patent

active

054060931

ABSTRACT:
A GaP pure green light emitting element substrate comprising an n-type GaP layer 12 and a p-type GaP layer 14 formed on a GaP single crystal substrate 10, characterized by the fact that an intermediate GaP layer 13 is formed at the pn junction portion between said n-type GaP layer 12 and said p-type GaP layer 14, wherein said intermediate GaP layer has a donor concentration N.sub.D of less than 1.times.10.sup.-16 atoms/cm.sup.3 and an acceptor concentration N.sub.A nearly equal to the donor concentration N.sub.D. The thickness of the intermediate GaP layer 13 is in the range of 3-5 micrometers.

REFERENCES:
patent: 4562378 (1985-12-01), Tadanobu et al.
patent: 4965644 (1990-10-01), Kawabata et al.

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