GaP light emitting element substrate with oxygen doped buffer

Details GaP light emitting element substrate with oxygen doped buffer GaP light emitting element substrate with oxygen doped buffer

1993-11-05

1994-09-20

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

257101, 257102, 257103, H01L 3300

Patent

active

053492080

ABSTRACT:
To obtain a GaP light emitting element substrate which provides GaP light emitting diodes with less luminance dispersion and high brightness. A GaP light emitting element substrate comprising an n-type GaP buffer layer, an n-type GaP layer and a p-type GaP layer layered one after another on an n-type GaP single crystal substrate, wherein the oxygen concentration in said n-type GaP buffer layer is kept at 6.times.10.sup.15 [atoms/cc] or less.

REFERENCES:
patent: 3394085 (1968-07-01), Westerveld et al.
patent: 3603833 (1971-09-01), Logan et al.
patent: 3619304 (1991-11-01), Naito et al.
patent: 3669767 (1972-06-01), Hackett, Jr. et al.
patent: 3689330 (1972-09-01), Dosen et al.
patent: 3703671 (1972-11-01), Saul
patent: 3755006 (1973-08-01), Casey, Jr. et al.
patent: 4180423 (1979-12-01), Naito et al.
Saul et al., "Distribution of Impurities in Zn, O-Doped GaP Liquid Phase Epitaxy Layers," J. Electrochem. Soc.: Solid State Science, vol. 117, No. 7, Jul. 1970, pp. 921-924.

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