Ganged MR head sensor

Dynamic magnetic information storage or retrieval – Head – Hall effect

Patent

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Details

G11B 539, G11B 5127

Patent

active

048519448

ABSTRACT:
A single magnetoresistive element ganged MR head sensor. The sensor is comprised of a single magnetoresistive element divided into a plurality of sense regions by more than two electrical contacts, the facing sides of each being parallel to each other and perpendicular to the lower edge of the element. No other transverse biasing is applied and the sensor operates in a non linear mode. The provision of no transverse biasing reduces cross talk.

REFERENCES:
patent: 3887944 (1975-06-01), Bajorek et al.
patent: 3967368 (1976-07-01), Brock et al.
patent: 4713708 (1987-12-01), Krounbi et al.

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