GaN single-crystal substrate, nitride type semiconductor...

Details GaN single-crystal substrate, nitride type semiconductor... GaN single-crystal substrate, nitride type semiconductor...

2005-01-11

2005-01-11

Stein, Stephen (Department: 1775)

Stock material or miscellaneous articles

Composite

Of inorganic material

C428S697000, C117S952000, C117S953000

Reexamination Certificate

active

06841274

ABSTRACT:
The GaN single-crystal substrate11in accordance with the present invention has a polished surface subjected to heat treatment for at least 10 minutes at a substrate temperature of at least 1020° C. in a mixed gas atmosphere containing at least an NH3gas. As a consequence, an atomic rearrangement is effected in the surface of the substrate11in which a large number of minute defects are formed by polishing, so as to flatten the surface of the substrate11.Therefore, the surface of an epitaxial layer12formed on the substrate11can be made flat.

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patent: WO 9923693 (1999-05-01), None

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