Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2006-01-24
2006-01-24
Harvey, Minsun Oh (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S043010, C372S050230, C372S050100, C372S103000, C372S092000
Reexamination Certificate
active
06990134
ABSTRACT:
A GaN series surface-emitting laser diode and a method for manufacturing the same are provided. The GaN series surface-emitting laser diode includes: an active layer; p-type and n-type material layers on the opposite sides of the active layer; a first-distributed Bragg reflector (DBR) layer formed on the n-type material layer; an n-type electrode connected to the active layer through the n-type material layer such that voltage is applied to the active layer for lasing; a spacer formed on the p-type material layer with a laser output window in a portion aligned with the first DBR layer, the spacer being thick enough to enable holes to effectively migrate to a center portion of the active layer; a second DBR layer formed on the laser output window; and a p-type electrode connected to the active layer through the p-type material layer such that voltage is applied to the active layer for lasing. The laser output window is shaped such that diffraction of a laser beam caused by the formation of the spacer can be compensated for.
REFERENCES:
patent: 5034958 (1991-07-01), Kwon et al.
patent: 5245622 (1993-09-01), Jewell et al.
patent: 5513202 (1996-04-01), Kobayashi et al.
patent: 5633527 (1997-05-01), Lear
patent: 5818862 (1998-10-01), Salet
patent: 5822347 (1998-10-01), Yokogawa et al.
patent: 5956362 (1999-09-01), Yokogawa et al.
patent: 6238944 (2001-05-01), Floyd
patent: 6343090 (2002-01-01), Yoo et al.
patent: 6529541 (2003-03-01), Ueki et al.
patent: 6534331 (2003-03-01), Liao et al.
patent: 6661829 (2003-12-01), Jeon
patent: 6754245 (2004-06-01), Park et al.
patent: 6778582 (2004-08-01), Mooradian
patent: 2003/0012231 (2003-01-01), Tayebati et al.
patent: 2003/0043871 (2003-03-01), Ueda et al.
patent: 0 651 477 (1995-05-01), None
patent: 0 918 384 (1999-05-01), None
patent: 0 918 384 (2000-03-01), None
patent: 97/40558 (1997-10-01), None
European Search Report issued by the European Patent Office on Jul. 6, 2004 in corresponding application EP 02250606.7.
Strzelecka et al., “Monolithic integration of vertical-cavity laser diodes with refractive GaAs microlenses,” Electronics Letters, vol. 31 No. 9, Apr. 27th, 1995.
Ha Kyoung-ho
Jeon Heon-su
Park Si-hyun
Park Yong-jo
Buchanan & Ingersoll PC
Flores-Ruiz Delma R.
Harvey Minsun Oh
Samsung Electro-Mechanics Co. Ltd.
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