GaN laser element

Details GaN laser element GaN laser element

2011-03-01

2011-03-01

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S050100, C372S050124

Reexamination Certificate

active

07899100

ABSTRACT:
In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

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