GaN Electroluminescent semiconductor device and method for makin

Details GaN Electroluminescent semiconductor device and method for makin GaN Electroluminescent semiconductor device and method for makin

1980-12-04

1983-10-04

Edlow, Martin H.

357 30, 357 61, H01L 3300

Patent

active

044082177

ABSTRACT:
An electroluminescent semiconductor device comprising bodies of conductive and resistive crystalline gallium nitride (GaN) which are successively epitaxially deposited on a surface of a heat-treated sapphire substrate, and a body of insulative crystalline gallium nitride epitaxially deposited on the resistive body.

REFERENCES:
patent: 4268842 (1982-05-01), Jacob

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