Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-06-21
2011-06-21
Nguyen, Thinh T (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S099000, C257S102000, C257S103000
Reexamination Certificate
active
07964884
ABSTRACT:
The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact. Furthermore, a P-type electrode is partially formed on a P—GaN layer in a mesh form to thereby maximize the emission of photons generated in the active layer toward the N—GaN layer.
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English language abstract of Japanese Publication No. 2003-46139.
English language abstract of Japanese Publication No. 2004-119981.
English language abstract of Japanese Publication No. 2004-179491.
English language abstract of Japanese Publication No. 2005-84634.
Jeffrey Nelson, “Research and Manufacturing Synergies between LEDs and PV”, NREL CD520-33586 (Mar. 24, 2003), pp. 319-338.
H.C. Park & Associates PLC
Nguyen Thinh T
Postech Foundation
Seoul Opto Device Co., Ltd.
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