GaN boule grown from liquid melt using GaN seed wafers

Details GaN boule grown from liquid melt using GaN seed wafers GaN boule grown from liquid melt using GaN seed wafers

2006-08-29

2006-08-29

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S014000, C117S020000, C117S081000, C117S082000, C117S083000

Reexamination Certificate

active

07097707

ABSTRACT:
A method of making a single crystal GaN boule, comprising contacting a GaN seed wafer with a GaN source environment under process conditions including a thermal gradient in the GaN source environment producing growth of gallium nitride on the GaN seed wafer, thereby forming the GaN boule. The GaN source environment in various implementations includes gallium melt in an ambient atmosphere of nitrogen or ammonia, or alternatively, supercritical ammonia containing solubilized GaN. The method produces single crystal GaN boules >10 millimeters in diameter, of device quality suitable for production of GaN wafers useful in the fabrication of microelectronic, optoelectronic and microelectromechanical devices and device precursor structures therefor.

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