GaN-based sensor nodes for in situ detection of gases

Communications: electrical – Condition responsive indicating system – With particular coupling link

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C340S686100, C340S539100, C340S533000, C073S024060, C073S023350

Reexamination Certificate

active

07403113

ABSTRACT:
A system for detecting chemical/biological substances and a detection method. The system comprises a plurality of sensing units or nodes and a radiofrequency link. Each unit has several sensors with different sensing curves. Each sensor is able to transmit information related to the sensed substance on a specific frequency. The sensors preferably comprise AlGaN/GaN high electron mobility transistors.

REFERENCES:
patent: 4365238 (1982-12-01), Kollin
patent: 5683569 (1997-11-01), Chung et al.
patent: 6057773 (2000-05-01), Shukla et al.
patent: 6168962 (2001-01-01), Itoh et al.
patent: 6489628 (2002-12-01), Morizuka
patent: 7053439 (2006-05-01), Kan et al.
patent: 2004/0121354 (2004-06-01), Yazawa et al.
patent: 2005/0153276 (2005-07-01), Wikswo et al.
patent: 2006/0163594 (2006-07-01), Kuzmik
patent: B 87 (2002) 425-430 (2002-08-01), None
J. Schalwig Gas sensitive GaN/AlGaN-heterostructures Apr. 24, 2002 B 87 (2002) 425-430.
Neuberger, R., et al., “High-Electron-Mobility AlGaN/GaN Transistors, HEMTs) for fluid Monitoring Applications”,Phys Status Solidi A185, 85 (2001).
Pearton, S.J., et al., “GaN-based diodes and transistors for chemical. Gas biological and pressure sensing”,Journal of Physics:Condensed Matter 16, R961-R994 (2004).
Schalwig, J., et al., “Gas Sensitive GaN/ AlGaN heterostructures”,Sensors and Acuators B-Chemical, 87(3). pp. 425-430 (Dec. 20, 2002).
Schalwig, J., et al., “Group III-Nitride-based Gas Sensors for Combustion Monitoring”,Materials for Science and Engineering, Solid State Materials for Advanced Technology, 93 (1-3), pp. 207-214 (May 30, 2002).
Son, K., et al., “Gas Phase Atomic Hydrogen-Induced Hydrogenation of Cyclohexene on the Ni (100) Surface”,Journal of Physics and Chemistry, 101 (18) pp. 3450-3546 (1997).
Stutzman, M., et al., “GaN-based heterostructures for applications”,Diamond and Related Materials, 11(3-6) pp. 886-891 (Mar.-Jun. 2002).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

GaN-based sensor nodes for in situ detection of gases does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with GaN-based sensor nodes for in situ detection of gases, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and GaN-based sensor nodes for in situ detection of gases will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2781199

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.