GaN based semiconductor light emitting device and method of...

Details GaN based semiconductor light emitting device and method of... GaN based semiconductor light emitting device and method of...

2007-03-13

2007-03-13

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S013000, C257S094000, C257S103000

Reexamination Certificate

active

10926398

ABSTRACT:
A GaN based semiconductor light emitting device has: an active layer disposed between an n-type layer and a p-type layer; and a polycrystalline nitride based semiconductor uneven layer disposed between the n-type layer and the active layer. The active layer is formed uneven according to the uneven form of the polycrystalline nitride based semiconductor uneven layer.

REFERENCES:
patent: 5760426 (1998-06-01), Marx et al.
patent: 6326638 (2001-12-01), Kamiyama et al.
patent: 6927164 (2005-08-01), Biwa et al.
patent: 10-215029 (1998-08-01), None

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