GaN-based semiconductor laser device

Details GaN-based semiconductor laser device GaN-based semiconductor laser device

2007-01-23

2007-01-23

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular beam control device

Mode discrimination

C372S029020, C372S045010, C372S046010

Reexamination Certificate

active

10490582

ABSTRACT:
According to an aspect of the present invention, a nitride semiconductor laser device includes a nitride semiconductor active layer, and a stripe-shaped waveguide for guiding light generated in the active layer. At least one pair of light-absorbing films are provided in at least local regions on the opposite sides of the stripe-shaped waveguide, to reach a distance within 0.3 μm from the waveguide. According to another aspect of the present invention, a gan-based semiconductor laser device includes first conductivity type semiconductor layers, a semiconductor active layer and second conductivity type semiconductor layers stacked sequentially. The laser device further includes a ridge stripe provided to cause a refractive index difference for confinement of light in a lateral direction crossing a longitudinal direction of a cavity, and a current-introducing window portion provided on the ridge stripe. The current-introducing window portion includes a narrow portion that is locally narrowed compared to the width of the ridge stripe.

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