GaN based semiconductor element

Details GaN based semiconductor element GaN based semiconductor element

2009-03-05

2010-10-12

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S076000, C257S190000, C257S213000

Reexamination Certificate

active

07812371

ABSTRACT:
The field effect transistor includes a laminated structure in which a buffer layer, and an electron transporting layer (undoped GaN layer), and an electron supplying layer (undoped AlGaN layer) are laminated in sequence on a sapphire substrate. An npn laminated structure is formed on a source region of the electron supplying layer, and a source electrode is formed on the npn laminated structure. A drain electrode is formed in a drain region of the electron supplying layer, and an insulating film is formed in an opening region formed in the gate region. When a forward voltage greater than a threshold is applied to the gate electrode, an inversion layer is formed and the drain current flows. By changing a thickness and an impurity concentration of the p-type GaN layer, the threshold voltage can be controlled. The electrical field concentration between the gate electrode and the drain electrode is relaxed due to the drift layer, and voltage resistance improves.

REFERENCES:
patent: WO-03-071607 (2003-08-01), None

Affiliated with

Also associated with

Rating

GaN based semiconductor element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with GaN based semiconductor element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and GaN based semiconductor element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4237195