GaN-based permeable base transistor and method of fabrication

Details GaN-based permeable base transistor and method of fabrication GaN-based permeable base transistor and method of fabrication

2004-10-01

2011-11-22

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Permeable or metal base

C438S172000, C438S342000, C438S718000, C438S173000, C257SE21246, C257SE21402, C257SE21220

Reissue Patent

active

RE042955

ABSTRACT:
An etched grooved GaN-based permeable-base transistor structure is disclosed, along with a method for fabrication of same.

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