GaN-based permeable base transistor and method of fabrication

Details GaN-based permeable base transistor and method of fabrication GaN-based permeable base transistor and method of fabrication

2004-10-01

2008-08-19

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Permeable or metal base

C438S172000, C438S173000, C438S342000, C438S718000, C257SE21220, C257SE21246, C257SE21402

Reexamination Certificate

active

07413958

ABSTRACT:
An etched grooved GaN-based permeable-base transistor structure is disclosed, along with a method for fabrication of same.

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