Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Patent
1997-09-08
2000-02-01
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
257 97, 372 45, 372 50, H01L 3300, H01S 319
Patent
active
060206020
ABSTRACT:
An n-cap layer is formed on a top surface of p-type clad layers, the p-type clad layer is a top layer of a stacked structure having a pn-junction for emitting carriers into light-emitting region of a GaN based light-emitting device, thus increasing the activation ratio of acceptor impurities in the p-type clad layers. The n-cap layer is used also as a current blocking layer, thereby constructing a current-blocked structure. The n-cap layer should preferably be made of In.sub.u Al.sub.v Ga.sub.1-u-v N (0<u, v<1) deposited as thick as 1.0 micron or more. The present invention will easily provide a high luminous efficiency GaN based semiconductor light-emitting device without using any complicated processes such as electron-beam irradiation or thermal annealing.
REFERENCES:
patent: 4903088 (1990-02-01), Van Updorp
patent: 5780876 (1998-07-01), Hata
Van Vechten, et al.; "Defeating Compensation in Wide Gap Semiconductors by Growing in H That is Removed by Low Temperature De-Ionizing Radiation", Jpn. J. Appl. Phys. vol. 31, Part 1, No. 11, Nov. 1992, pp. 3662-3663.
Amano, et al.; "P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)", Jpn. J. Appl. Phys. vol. 28, No. 12, Dec. 1989, pp. L2112-L2114.
Nakamura, et al.; "Hole Compensation Mechanism of P-Type GaN Films", Jpn. J. Appl. Phys. vol. 31, Part 1, No. 5A, May 1992, pp. 1258-1266.
Ishikawa Masayuki
Sugawara Hideto
Jackson, Jr. Jerome
Kabushiki Kaisha Toshba
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