GaN based luminescent device on a metal substrate

Details GaN based luminescent device on a metal substrate GaN based luminescent device on a metal substrate

2011-03-01

2011-03-01

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S079000, C257S094000, C257SE33026, C257SE33027, C257SE33028, C257SE33029, C257SE33041

Reexamination Certificate

active

07897993

ABSTRACT:
A compound semiconductor luminescent device characterized by comprising an electroconductive substrate, a compound semiconductor function layer including a GaN layer, an electrode, an adhesiveness-enhancing layer, and a bonding layer, which are stacked in this order wherein the above-described electroconductive substrate includes a metal material that indicates a thermal expansion coefficient different by 1.5×10−6/° C. or less from GaN.

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