GaN based LED with improved light extraction efficiency and...

Details GaN based LED with improved light extraction efficiency and... GaN based LED with improved light extraction efficiency and...

2011-08-09

2011-08-09

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Reexamination Certificate

active

07993943

ABSTRACT:
A light-emitting device and the method for making the same are disclosed. The device includes a substrate, a light-emitting structure and a light scattering layer. The light-emitting structure includes an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, the active layer emitting light of a predetermined wavelength when electrons and holes from the n-type GaN layer and the p-type GaN layer, respectively, combine therein. The light scattering layer includes a GaN crystalline layer characterized by an N-face surface. The N-face surface includes features that scatter light of the predetermined wavelength. The light-emitting structure is between the N-face surface and the substrate.

REFERENCES:
patent: 6441403 (2002-08-01), Chang et al.
patent: 2007/0121690 (2007-05-01), Fujii et al.
P.R. Tavernier et al., “The growth of N-face GaN by MOCVD: effect of Mg, Si, and In”, Jan. 9, 2004,Journal of Crystal Growth 264 (2004) 150-158.

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