Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system
Patent
1995-06-07
1997-04-01
Hannaher, Constantine
Radiant energy
Invisible radiant energy responsive electric signalling
Semiconductor system
25037009, 25037012, G01T 124, H01L 310256
Patent
active
056169256
ABSTRACT:
Gamma ray detectors (20, 130) are provided with a detector layer (30) that is formed of Hg.sub.x Cd.sub.1-x-y Zn.sub.y Te, wherein 0<x<0.05 and 0.ltoreq.y<0.5. The Hg percentage in the group II sublattice of this detector layer is limited to replace Cd vacancies. These Cd vacancies are native point defects which degrade the resolution of gamma ray detectors because they facilitate early electron-hole recombination and time delays of current carriers.
REFERENCES:
patent: 5391882 (1995-02-01), Rhiger
Sen, S., et al. "Crystal Growth of Large-Area Single-Crystal CdTe and CdZnTe", Journal of Crystal Growth 86 (1988), North-Holland, Amsterdam, pp. 111-117.
Grove, A.S., Physics and Technology of Semiconductor Devices, John Wiley & Sons, New York, 1967, p. 46.
Hogg, J.H.C., et al., "Chemical Diffusion of Hg in CdTe", Materials Science and Engineering, B16 (1993), pp. 195-198.
Jones, E. D., et al., "The diffusion of mercury in cadmium telluride", Journal of Crystal Growth 118, (1992), pp. 1-13.
Siffert, P., "Cadmium Telleride Detectors and Applications", Material Resources Society Symposium, vol. 16 (1983), pp. 87-114.
Hamilton, Jr. William J.
Rhiger David R.
Sen Sanghamitra
Denson-Low W. K.
Hannaher Constantine
Santa Barbara Research Center
Schubert W. C.
Tyler Virgil Orlando
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