Gallium-phosphorus simultaneous diffusion process

Details Gallium-phosphorus simultaneous diffusion process Gallium-phosphorus simultaneous diffusion process

1973-02-05

1976-03-09

Satterfield, Walter R.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148187, H01L 736

Patent

active

039430162

ABSTRACT:
By protecting one surface of a silicon element with an oxide layer while leaving another surface exposed it is possible to diffuse both gallium and phosphorus into the silicon element simultaneously in a selective manner. Gallium will penetrate the oxide layer while phosphorus will not, thereby forming a P conductivity type layer beneath the oxide layer. At the same time both gallium and phosphorus will diffuse into the remaining surfaces of the element. A higher concentration of phosphorus than gallium will diffuse to all depths, thereby forming an N conductivity type layer adjacent the exposed surface of the silicon element.

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patent: 3484313 (1969-12-01), Tauchi et al.
patent: 3615932 (1971-10-01), Makimoto

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