Gallium phosphide semiconductor device having improved electrode

Details Gallium phosphide semiconductor device having improved electrode Gallium phosphide semiconductor device having improved electrode

1978-08-29

1980-10-14

James, Andrew J.

357 17, 357 65, H01L 2348, H01L 2946, H01L 2962

Patent

active

042284554

ABSTRACT:
A gallium phosphide semiconductor device comprising an N type gallium phosphide monocrystal, a semiconductor layer formed in or on the monocrystal, and a pair of electrodes formed on the monocrystal and on the semiconductor layer. The electrode on the monocrystal is made of a gold-germanium alloy having a predetermined germanium content.

REFERENCES:
patent: Re27879 (1974-01-01), Collins et al.
patent: 3532562 (1970-10-01), Clawson et al.
patent: 3728785 (1973-04-01), Schmidt
patent: 3729807 (1973-05-01), Fujiwara
patent: 3871016 (1975-03-01), Debesis

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