Gallium phosphide photodetector having an as-grown surface and p

Details Gallium phosphide photodetector having an as-grown surface and p Gallium phosphide photodetector having an as-grown surface and p

1975-04-07

1976-08-24

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

357 29, H01J 3912

Patent

active

039768724

ABSTRACT:
Anomalously large photoresponse to radiation of energies between about 2.8 eV and about 3.8 eV has been observed in certain gallium phosphide photodetectors having an "as-grown" surface. This photoresponse is believed to be due to the low density of recombination centers in the as-grown surface.

REFERENCES:
patent: 3585087 (1971-06-01), Blum et al.
patent: 3586857 (1971-06-01), Glasow
patent: 3675026 (1972-07-01), Woodall
patent: 3715245 (1973-02-01), Barnett et al.
patent: 3717799 (1973-02-01), Chapman
patent: 3748480 (1973-07-01), Coleman
patent: 3761837 (1973-09-01), Leheny et al.

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