Gallium phosphide light-emitting diodes

Patent

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357 63, H05h 3300

Patent

active

039316319

ABSTRACT:
The disclosure herein pertains to a vapor phase process for the preparation of electroluminescent materials, particularly GaP, doped with isoelectronic impurities, particularly nitrogen, and to electroluminescent devices fabricated therefrom.

REFERENCES:
patent: 3646406 (1972-03-01), Logan
patent: 3687744 (1972-05-01), Ogirima

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