Gallium phosphide light-emitting diode

Details Gallium phosphide light-emitting diode Gallium phosphide light-emitting diode

1983-06-29

1985-12-31

Moore, David K.

Electric lamp and discharge devices

With luminescent solid or liquid material

Solid-state type

313498, H01L 3300

Patent

active

045623783

ABSTRACT:
A gallium phosphide light-emitting diode comprises n-type layers (21 to 23) formed successively on an n-type substrate (20). The impurity concentration of the first n-type layer (21) is higher than the impurity concentration of the n-type substrate (20), (1 to 3).times.10.sup.17 cm.sup.-3, and is for example (5 to 8).times.10.sup.17 cm.sup.-3. The impurity concentration of the second n-type layer (23) is lower than that of the n-type substrate (20) and is for example (0.6 to 3).times.10.sup.16 cm.sup.-3. Since the impurity concentration of the second n-type layer (23) is decreased, a high electroluminescence efficiency can be obtained. Furthermore, since the first n-type layer (21) has a high impurity concentration, perfection of crystal can be attained for each n-type layer and accordingly, switching operation is not caused.

REFERENCES:
patent: 4354140 (1982-10-01), Nishizawa

Affiliated with

Also associated with

Rating

Gallium phosphide light-emitting diode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gallium phosphide light-emitting diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gallium phosphide light-emitting diode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1026386