Gallium oxide coatings for optoelectronic devices using electron

Details Gallium oxide coatings for optoelectronic devices using electron Gallium oxide coatings for optoelectronic devices using electron

1994-03-23

1996-08-27

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437228, 437236, H01L 2100, H01L 2102, H01L 21302, H01L 21463

Patent

active

055500897

ABSTRACT:
An optoelectronic lII-V or II-VI semiconductor device comprises a thin film coating with optical characteristics providing low midgap interface state density. A field effect device for inversion channel applications on III-V semiconductors also comprises a thin dielectric film providing required interface characteristics. The thin film is also applicable to passivation of states on exposed surfaces of electronic III-V devices. The thin film comprises a uniform, homogeneous, dense, stoichiometric gallium oxide (Ga.sub.2 O.sub.3) dielectric thin film, fabricated by electron-beam evaporation of a single crystal, high purity Gd.sub.3 Ga.sub.5 O.sub.12 complex compound on semiconductor substrates kept at temperatures ranging from 40.degree. to 370.degree. C. and at background pressures at or above 1.times.10.sup.-10 Torr.

REFERENCES:
patent: 4617192 (1986-10-01), Chin et al.
patent: 4749255 (1988-07-01), Chakrabarti et al.
M. Fleischer, "Stability of Semiconducting Gallium Oxide-Thin Films," Thin Solid Films, 190 (1990), pp. 93-102.
A. Callegari, et al, "Unpinned Gallium Oxide/GaAs Interface by Hydrogen and Nitrogen Surface Plasma Treatment", Appl Phys Lett, 454(4) 23 Jan. 89, pp.332-334.
S. M. Sze, Physics of Semiconductor Devices, 2nd Ed., pp. 366-369.
L. M. Terman, "An Investigation of Surface States at a Silicon/Silicon Oxide Interface Employing Metal-Oxide-Silicon Diodes," Solid State Electronics, vol. 5, Sep.-Oct. 1962, pp. 285-299.

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