Gallium nitride vertical light emitting diode structure and...

Details Gallium nitride vertical light emitting diode structure and... Gallium nitride vertical light emitting diode structure and...

2006-02-21

2006-02-21

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S105000, C438S030000

Reexamination Certificate

active

07001824

ABSTRACT:
A gallium nitride (GaN) vertical light emitting diode (LED) structure and a method of separating a substrate and a thin film thereon in the GaN vertical LED are described. The structure has a metal reflective layer for reflecting light. The method provides a laser array over the substrate. A laser light emitted by the laser array is least partially be transparent to the substrate and its energy may be absorbed by the thin film. The thin film is irradiated through the substrate. The substrate is then separated from the thin film.

REFERENCES:
patent: 5281830 (1994-01-01), Kotaki et al.
patent: 5952680 (1999-09-01), Strite
patent: 6562648 (2003-05-01), Wong et al.
patent: 6611003 (2003-08-01), Hatakoshi et al.
patent: 6627921 (2003-09-01), Wong et al.
patent: 2003/0150843 (2003-08-01), Doi et al.

Affiliated with

Also associated with

Rating

Gallium nitride vertical light emitting diode structure and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gallium nitride vertical light emitting diode structure and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gallium nitride vertical light emitting diode structure and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3640970