Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1996-06-13
1998-08-11
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 22, 257 94, 257103, 257628, H01L 2906
Patent
active
057930546
ABSTRACT:
A gallium nitride type compound semiconductor light emitting element, such as a semiconductor laser, a light emitting diode is constructed by forming an In.sub.0.06 Ga.sub.0.94 N buffer layer, an n-type In.sub.0.06 Ga.sub.0.94 N clad layer, an n-type In.sub.0.06 Al.sub.0.15 Ga.sub.0.79 N clad layer, an undoped GaN active layer having layer thickness of 50 nm, a p-type In.sub.0.06 Al.sub.0.15 Ga.sub.0.79 N clad layer and a p-type In.sub.0.06 Ga.sub.0.94 N cap layer on a (0001) azimuth sapphire substrate. A p-side electrode is formed on the p-type In.sub.0.06 Ga.sub.0.94 N cap layer, and an n-side electrode is formed on the n-type In.sub.0.06 Ga.sub.0.94 N clad layer. In the construction set forth above, a greater thickness for the active layer is provided. Also, tensile strain is applied to the active layer. Light is taken out in parallel direction to the substrate. This threshold current of the semiconductor laser is lowered and light emitting efficiency of the light emitting diode is improved.
REFERENCES:
patent: 5146465 (1992-09-01), Khan et al.
patent: 5585648 (1996-12-01), Tischler
patent: 5689123 (1997-11-01), Major et al.
"Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes": Nakamura et al Appl. Phys. Lett. 64 (13), Mar. 28, 1994; pp. 1687-1689.
"High-Performance 1.5 um Wavelenght InGaAs-InGaAsP Strained Quantum Well Lasers and Amplifiers" Thijs et al; IEEE Journal of Quantum Electronics, vol. 27, No. 6, Jun. 6, 1991 pp. 1426-1439.
"Optical Gain Calculation of Wurtzite GaN/AlGaN Quantum Well Laser" Kamiyama et al Jpn. J. Appli. Phys. vol. 34, (1995) Part 2, No. 7A, Jul. 1, 1993; pp. L821-L823.
"High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes wiht Quantum Well Structures" Nakamura et al Jpn. J. Appln. Phys. vol. 34, (1995) Part 2, No. 7A, Jul. 1, 1995, pp. L797-L799.
Chaudhuri Olik
Kelley Nathan
NEC Corporation
LandOfFree
Gallium nitride type compound semiconductor light emitting eleme does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gallium nitride type compound semiconductor light emitting eleme, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gallium nitride type compound semiconductor light emitting eleme will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-391567