Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Patent
1998-06-01
2000-07-18
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
257 76, 257 97, 257190, 257196, 257201, 257615, 257618, 257622, 257623, 372 45, 372 46, H01L 2715
Patent
active
060910836
ABSTRACT:
A gallium nitride type compound semiconductor light-emitting device of the present invention includes: a substrate; a buffer layer, formed on the substrate, having a thick region and a thin region in terms of a thickness taking a surface of the substrate as a reference level; and a semiconductor layered structure, formed on the buffer layer, at least including an undoped gallium nitride type compound semiconductor layer, a gallium nitride type compound semiconductor active layer, and a P-type gallium nitride type compound semiconductor cladding layer.
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Itaya, K. et al. "Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates" Appl. Phys. (1996) 35:1315-1317.
Hanaoka Daisuke
Hata Toshio
Sugahara Satoshi
Baumeister Bradley W.
Jackson, Jr. Jerome
Sharp Kabushiki Kaisha
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