Gallium nitride semiconductor light emitting element

Details Gallium nitride semiconductor light emitting element Gallium nitride semiconductor light emitting element

2011-01-18

2011-01-18

Tran, Long K (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S085000, C257S096000, C257S101000, C257S103000, C257SE33025, C257SE33028, C257SE33034, C257SE33036, C257SE33037

Reexamination Certificate

active

07872269

ABSTRACT:
Provided is a gallium nitride semiconductor light emitting element capable of stabilizing a drive voltage by reducing carrier depletion attributable to spontaneous polarization and piezo polarization generated at the interface between an AlGaN semiconductor layer and a GaN semiconductor layer.A gallium nitride semiconductor crystal2including a light emitting region is formed on the R plane of a sapphire substrate1. In addition, in another constitution, a gallium nitride semiconductor crystal2is formed on the A plane of a GaN substrate3or on the M plane of a GaN substrate4. The growth surface of these gallium nitride semiconductor crystals2are not an N (nitrogen) polar face or a Ga polar face but are non-polar faces. This can decrease the strength of an electric field caused by spontaneous polarization and piezo polarization generated at the interface of GaN/AlGaN at the p side. Thus, carrier depletion can be avoided.

REFERENCES:
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patent: 2005/0214992 (2005-09-01), Chakraborty et al.
patent: 2008/0251781 (2008-10-01), Han et al.
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patent: 2004335559 (2004-11-01), None
patent: 2006196490 (2006-07-01), None

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